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ZnSe(Te,O) is a new type of scintillator that exhibits a relatively high light output at longer wavelengths (red) with no afterglow and high thermal and radiation stability.
- Tomography: coupled to Si-photodiode, it is the most suitable scintillator for this application, due to its optical and physical properties, and can be used for X-ray imaging as well
- X-ray: ZnSe(Te) semiconductor properties and high efficiency can be combined to create scintielectronic detectors of X-ray of type "photosensitive heterostructure AIIBVI"
- Alpha/beta spectrometry: detectors based on the Schottky barrier structure of metal - nZnSe(Te) have been developped for the detection of charged particles and UV-radiation
|Material||ZnSe(Te,O) - Zinc Selenide|
|Conversion efficiency (%)||19.4|
|Decay time τ (µs)||5-7|
|Effective atomic number Z||33|
|Emission maximum λm at 300 K (nm)||610|
|Afterglow (after 10 ms) (%)||0.05|
|Attenuation coefficient at λm (cm-1)||0.1-0.3|
- ZnSe(Te) are grown by the vertical Bridgman method in graphite crucibles under inert gas (Ar) pressure 5x106 Pa, at a temperature in the melting zone of about 1860 K.
| Spectral-luminescent characteristics of the scintillators:
| X-ray sensitivity of scintillators CsI(Tl) and ZnSe(Te) as function of radiation energy
| Output signal as function of X-ray (Ex≈60 keV) dose rate for detectors:
|Temperature dependencies of open-circuit voltage and of short-circuit current of the CD photoreceiver.|
| Photosensitivity spectra of structure nZnSe(Te)-Ni at: