ZnSe(Te)
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ZnSe(Te,O) is a new type of scintillator that exhibits a relatively high light output at longer wavelengths (red) with no afterglow and high thermal and radiation stability.
Applications
- Tomography: coupled to Si-photodiode, it is the most suitable scintillator for this application, due to its optical and physical properties, and can be used for X-ray imaging as well
- X-ray: ZnSe(Te) semiconductor properties and high efficiency can be combined to create scintielectronic detectors of X-ray of type "photosensitive heterostructure AIIBVI"
- Alpha/beta spectrometry: detectors based on the Schottky barrier structure of metal - nZnSe(Te) have been developped for the detection of charged particles and UV-radiation
Technical Chart
| Material | ZnSe(Te,O) - Zinc Selenide |
| Conversion efficiency (%) | 19.4 |
| Decay time τ (µs) | 5-7 |
| Density (g/cm3) | 5.4 |
| Effective atomic number Z | 33 |
| Emission maximum λm at 300 K (nm) | 610 |
| Afterglow (after 10 ms) (%) | 0.05 |
| Attenuation coefficient at λm (cm-1) | 0.1-0.3 |
Additional information
- ZnSe(Te) are grown by the vertical Bridgman method in graphite crucibles under inert gas (Ar) pressure 5x106 Pa, at a temperature in the melting zone of about 1860 K.
Graphs
Spectral-luminescent characteristics of the scintillators:
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X-ray sensitivity of scintillators CsI(Tl) and ZnSe(Te) as function of radiation energy
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Output signal as function of X-ray (Ex≈60 keV) dose rate for detectors:
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| Temperature dependencies of open-circuit voltage and of short-circuit current of the CD photoreceiver. |
Photosensitivity spectra of structure nZnSe(Te)-Ni at:
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